Tau Wae : | UNR421D00A |
---|---|
Kaihanga / Waitohu : | Panasonic |
Whakaahuatanga : | TRANS PREBIAS NPN 300MW NS-B1 |
RoHs Tūnga : | Whakahaerehia te kore utu / RoHS |
He Rahinga Kei te wātea | 3976 pcs |
Ngā Rauemi | UNR421D00A.pdf |
Ngaohihi - Te Whakatere Emitter Break (Max) | 50V |
Utu Utu (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Momo Pukapuka | NPN - Pre-Biased |
Pūrere Pūrere Whakarato | NS-B1 |
Raupapa | - |
Resistor - Emitter Base (R2) | 10 kOhms |
Resistor - Base (R1) | 47 kOhms |
Mana - Max | 300mW |
Packaging | Cut Tape (CT) |
Paa / Case | NS-B1 |
Ētahi Ingoa | UNR421D00ACT |
Momo Tae | Through Hole |
Taumata Whakaaro Moe (MSL) | 1 (Unlimited) |
Whakahaere Toko Whakahaere / RoHS Tūnga | Lead free / RoHS Compliant |
Tuhinga - Te whakawhiti | 150MHz |
Whakaahuatanga Taipitopito | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1 |
DC Ripa o Naianei (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
I teie nei - Kohikohi Cutoff (Max) | 500nA |
I teie nei - Kohikohi (Ic) (Max) | 100mA |