Tau Wae : | SI4922BDY-T1-GE3 |
---|---|
Kaihanga / Waitohu : | Electro-Films (EFI) / Vishay |
Whakaahuatanga : | MOSFET 2N-CH 30V 8A 8-SOIC |
RoHs Tūnga : | Whakahaerehia te kore utu / RoHS |
He Rahinga Kei te wātea | 39052 pcs |
Ngā Rauemi | SI4922BDY-T1-GE3.pdf |
Vgs (th) (Max) @ Id | 1.8V @ 250µA |
Pūrere Pūrere Whakarato | 8-SO |
Raupapa | TrenchFET® |
Runa I (Max) @ Id, Vgs | 16 mOhm @ 5A, 10V |
Mana - Max | 3.1W |
Packaging | Tape & Reel (TR) |
Paa / Case | 8-SOIC (0.154", 3.90mm Width) |
Ētahi Ingoa | SI4922BDY-T1-GE3-ND SI4922BDY-T1-GE3TR |
Tae Mahi | -55°C ~ 150°C (TJ) |
Momo Tae | Surface Mount |
Taumata Whakaaro Moe (MSL) | 1 (Unlimited) |
Te Tae Kaituku Taeke | 33 Weeks |
Whakahaere Toko Whakahaere / RoHS Tūnga | Lead free / RoHS Compliant |
Whakauru Whakauru (Ciss) (Max) @ Vds | 2070pF @ 15V |
Puta Whakatau (Qg) (Max) @ Vgs | 62nC @ 10V |
Momo FET | 2 N-Channel (Dual) |
FET Pānga | Standard |
Tuku ki te Pūtake Pūtake (Vdss) | 30V |
Whakaahuatanga Taipitopito | Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SO |
I teie nei - Ngaa Toa (Id) @ 25 ° C | 8A |
Tau Wae Tuakiri | SI4922 |