Tau Wae : | RN2910FE,LF(CB |
---|---|
Kaihanga / Waitohu : | Toshiba Semiconductor and Storage |
Whakaahuatanga : | TRANS 2PNP PREBIAS 0.1W ES6 |
RoHs Tūnga : | Whakahaerehia te kore utu / RoHS |
He Rahinga Kei te wātea | 1459077 pcs |
Ngā Rauemi | RN2910FE,LF(CB.pdf |
Ngaohihi - Te Whakatere Emitter Break (Max) | 50V |
Utu Utu (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Momo Pukapuka | 2 PNP - Pre-Biased (Dual) |
Pūrere Pūrere Whakarato | ES6 |
Raupapa | - |
Resistor - Emitter Base (R2) | - |
Resistor - Base (R1) | 4.7 kOhms |
Mana - Max | 100mW |
Packaging | Tape & Reel (TR) |
Paa / Case | SOT-563, SOT-666 |
Ētahi Ingoa | RN2910FE(T5L,F,T) RN2910FE(T5LFT)TR RN2910FE(T5LFT)TR-ND RN2910FE,LF(CT RN2910FELF(CBTR RN2910FELF(CTTR RN2910FELF(CTTR-ND |
Momo Tae | Surface Mount |
Taumata Whakaaro Moe (MSL) | 1 (Unlimited) |
Te Tae Kaituku Taeke | 16 Weeks |
Whakahaere Toko Whakahaere / RoHS Tūnga | Lead free / RoHS Compliant |
Tuhinga - Te whakawhiti | 200MHz |
Whakaahuatanga Taipitopito | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
DC Ripa o Naianei (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
I teie nei - Kohikohi Cutoff (Max) | 100nA (ICBO) |
I teie nei - Kohikohi (Ic) (Max) | 100mA |