Tau Wae : | RN1964FE(TE85L,F) |
---|---|
Kaihanga / Waitohu : | Toshiba Semiconductor and Storage |
Whakaahuatanga : | TRANS 2NPN PREBIAS 0.1W ES6 |
RoHs Tūnga : | Whakahaerehia te kore utu / RoHS |
He Rahinga Kei te wātea | 453066 pcs |
Ngā Rauemi | RN1964FE(TE85L,F).pdf |
Ngaohihi - Te Whakatere Emitter Break (Max) | 50V |
Utu Utu (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Momo Pukapuka | 2 NPN - Pre-Biased (Dual) |
Pūrere Pūrere Whakarato | ES6 |
Raupapa | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 47 kOhms |
Mana - Max | 100mW |
Packaging | Tape & Reel (TR) |
Paa / Case | SOT-563, SOT-666 |
Ētahi Ingoa | RN1964FE(TE85LF)TR RN1964FETE85LF |
Momo Tae | Surface Mount |
Taumata Whakaaro Moe (MSL) | 1 (Unlimited) |
Whakahaere Toko Whakahaere / RoHS Tūnga | Lead free / RoHS Compliant |
Tuhinga - Te whakawhiti | 250MHz |
Whakaahuatanga Taipitopito | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
DC Ripa o Naianei (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
I teie nei - Kohikohi Cutoff (Max) | 100nA (ICBO) |
I teie nei - Kohikohi (Ic) (Max) | 100mA |