| Tau Wae : |
RN1909FE(TE85L,F) |
| Kaihanga / Waitohu : |
Toshiba Semiconductor and Storage |
| Whakaahuatanga : |
TRANS 2NPN PREBIAS 0.1W ES6 |
| RoHs Tūnga : |
Whakahaerehia te kore utu / RoHS |
| He Rahinga Kei te wātea |
390171 pcs |
| Ngā Rauemi |
RN1909FE(TE85L,F).pdf |
| Ngaohihi - Te Whakatere Emitter Break (Max) |
50V |
| Utu Utu (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
| Momo Pukapuka |
2 NPN - Pre-Biased (Dual) |
| Pūrere Pūrere Whakarato |
ES6 |
| Raupapa |
- |
| Resistor - Emitter Base (R2) |
22 kOhms |
| Resistor - Base (R1) |
47 kOhms |
| Mana - Max |
100mW |
| Packaging |
Cut Tape (CT) |
| Paa / Case |
SOT-563, SOT-666 |
| Ētahi Ingoa |
RN1909FE(TE85LF)CT |
| Momo Tae |
Surface Mount |
| Taumata Whakaaro Moe (MSL) |
1 (Unlimited) |
| Whakahaere Toko Whakahaere / RoHS Tūnga |
Lead free / RoHS Compliant |
| Tuhinga - Te whakawhiti |
250MHz |
| Whakaahuatanga Taipitopito |
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
| DC Ripa o Naianei (hFE) (Min) @ Ic, Vce |
70 @ 10mA, 5V |
| I teie nei - Kohikohi Cutoff (Max) |
100nA (ICBO) |
| I teie nei - Kohikohi (Ic) (Max) |
100mA |
Toshiba Semiconductor and Storage
