Tau Wae : | NSBA123JDXV6T1G |
---|---|
Kaihanga / Waitohu : | AMI Semiconductor / ON Semiconductor |
Whakaahuatanga : | TRANS 2PNP PREBIAS 0.5W SOT563 |
RoHs Tūnga : | Whakahaerehia te kore utu / RoHS |
He Rahinga Kei te wātea | 5924 pcs |
Ngā Rauemi | NSBA123JDXV6T1G.pdf |
Ngaohihi - Te Whakatere Emitter Break (Max) | 50V |
Utu Utu (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Momo Pukapuka | 2 PNP - Pre-Biased (Dual) |
Pūrere Pūrere Whakarato | SOT-563 |
Raupapa | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Mana - Max | 500mW |
Packaging | Tape & Reel (TR) |
Paa / Case | SOT-563, SOT-666 |
Ētahi Ingoa | NSBA123JDXV6T1GOS NSBA123JDXV6T1GOS-ND NSBA123JDXV6T1GOSTR |
Momo Tae | Surface Mount |
Taumata Whakaaro Moe (MSL) | 1 (Unlimited) |
Whakahaere Toko Whakahaere / RoHS Tūnga | Lead free / RoHS Compliant |
Tuhinga - Te whakawhiti | - |
Whakaahuatanga Taipitopito | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
DC Ripa o Naianei (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
I teie nei - Kohikohi Cutoff (Max) | 500nA |
I teie nei - Kohikohi (Ic) (Max) | 100mA |
Tau Wae Tuakiri | NSBA1* |