| Tau Wae : | 1N8028-GA |
|---|---|
| Kaihanga / Waitohu : | GeneSiC Semiconductor |
| Whakaahuatanga : | DIODE SCHOTTKY 1.2KV 9.4A TO257 |
| RoHs Tūnga : | Kei roto nga rangatira / RoHS kaore i te ture |
| He Rahinga Kei te wātea | 211 pcs |
| Ngā Rauemi | 1N8028-GA.pdf |
| Ngaohihi - Te Peak Reverse (Max) | Silicon Carbide Schottky |
| Puku - Whakamua (Vf) (Max) @ Ki te | 9.4A (DC) |
| Tuhinga o mua - Breakdown | TO-257 |
| Raupapa | - |
| RoHS Tūnga | Tube |
| Te Whakaora Whakaora (trr) | No Recovery Time > 500mA (Io) |
| Resistance @ Ki, F | 884pF @ 1V, 1MHz |
| Ko te poari | TO-257-3 |
| Ētahi Ingoa | 1242-1115 1N8028GA |
| Te Mahinga Mahi - Ngaru | 0ns |
| Momo Tae | Through Hole |
| Taumata Whakaaro Moe (MSL) | 1 (Unlimited) |
| Te Tae Kaituku Taeke | 18 Weeks |
| Waehanga Kaihanga | 1N8028-GA |
| Whakaahua nui | Diode Silicon Carbide Schottky 1200V (1.2kV) 9.4A (DC) Through Hole TO-257 |
| Te Whirihoranga Diode | 20µA @ 1200V |
| Whakaahuatanga | DIODE SCHOTTKY 1.2KV 9.4A TO257 |
| I teie nei - Tapeke Reverse @ Vr | 1.6V @ 10A |
| I teie nei - Te Whakatika Raraunga (Io) (ia Diode) | 1200V (1.2kV) |
| Capacitance @ Vr, F | -55°C ~ 250°C |
GeneSiC Semiconductor
